Silicon Sputtering Target
Atomic Number: 14
Density: 2.33 g/cc
Melting Point: 1414 °C
Plasmaterials, Inc. offers silicon for PVD processing in many different forms. For planar sputtering target applications silicon can be produced either in single or polycrystalline crystallographic structures. Elemental silicon sputtering targets can also be doped with either boron or phosphorus to provide positive or negative charge formations for various semiconductor applications. Plasmaterials, Inc. also offers plasma sprayed silicon for rotatable target designs supplied on suitable backing tubes. Typically, planar silicon targets are metallically bonded to copper backing plates, however, they also can be supplied in monolithic form as required. Silicon evaporation material is supplied as random size pieces varying in size from 1-3mm, 3-6mm, 6-8mm or per customer specification. E-beam starter sources are also available in all the conventional sizes. Silicon sputtering targets may be deposited elementally to produce Si resultant films or reactively by adding a partial pressure of either oxygen or nitrogen to produce SiO2 or Si3N4 resultant films respectively.
Sputtered thin films of silicon, whether coated as Si, SiO2 or Si3N4, have a broad range of applications. Just to name a few: microelectronics, durability coatings, optical filters, sensor, fiber optics, photovoltaic, anti-reflection, band pass filters, acoustical attenuation etc., etc., etc.